Found this today:
http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&u=%2Fnetahtml%2FPTO%2Fsearch-adv.htm&r=1&p=1&f=G&l=50&d=PTXT&S1=taylor-geoff-w.INNM.&OS=in/taylor-geoff-w&RS=IN/taylor-geoff-w
| United States Patent |
9,679,987 |
| Taylor |
June 13, 2017 |
Fabrication methodology for optoelectronic integrated circuits
Abstract
A method of forming an integrated circuit employs a plurality of layers formed on a substrate including i) n-type modulation doped quantum well structure (MDQWS) structure with n-type charge sheet, ii) p-type MDQWS, iii) undoped spacer layer formed on the n-type charge sheet, iv) p-type layer(s) formed on the undoped spacer layer, v) p-type etch stop layer formed on the p-type layer(s) of iv), and vi) p-type layers (including p-type ohmic contact layer(s)) formed on the p-type etch stop layer. An etch operation removes the p-type layers of vi) for a gate region of an n-channel HFET with an etchant that automatically stops at the p-type etch stop layer. Another etch operation removes the p-type etch stop layer to form a mesa at the p-type layer(s) of iv) which defines an interface to the gate region of the n-channel HFET, and a gate electrode is formed on such mesa.
It sounds familiar...there's a previously posted patent with the same title, but with a different abstract:
This could be an update
I haven't read this new one yet, but I think it's either an update or more likely another method.
