My question today is about the leap from 4N to 6N purity in the process of making solar grade silicon.
Some of the more scientific-minded HPQ/PYR shareholders have mentioned that when the crystallization phase is performed, which is a standard process needed before wafers can be cut, 4N purity can increase to 6N purity. In effect, if we are already hitting 4N then we are effectively able to produce 6N solar grade material (of course we need to prove this at pilot scale).
This sounds exciting, but I haven't heard about this bump in purity due to crystallization/directional solidification from PYR management. Can you comment on this aspect of the science?